STB8444 Datasheet PDF

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. TO-220 and TO-263 Package. ID 80A R DS(ON) (m Ω) Max 4.8 @ VGS=10V D D G S G D S G STP SERIES TO-220 STB SERIES TO-263(DD-PAK) S

ABSOLUTE MAXIMUM RATINGS

( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 40 ±20 TC=25°C 80 264 306 TC=25°C 62 -55 to 150 Units V V A A mJ W °C Sigle Pulse Avalanche Energy Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 1.8 62.5 °C/W °C/W Details are subject to change without notice. Mar,26,2008 1 STB/P8444 Ver 1.0

ELECTRICAL CHARACTERISTICS

( T A=25 °C unless otherwise noted ) 4 Symbol Parameter Conditions Min Typ Max Units V OFF CHARACTERISTICS Drain-Source Breakdown Voltage BVDSS Zero Gate Voltage Drain Current IDSS Gate-Bod...