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STM101N - N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Typ 170 @ VGS=10V 260 @ VGS=4.5V S O-8 1.

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Datasheet Details

Part number STM101N
Manufacturer SamHop Microelectronics
File Size 180.04 KB
Description N-Channel MOSFET
Datasheet download datasheet STM101N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STM101N Ver1.0 S a mHop Microelectronics C orp. N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 3A R DS(ON) (m Ω) Typ 170 @ VGS=10V 260 @ VGS=4.5V S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous b a Limit 100 ±20 TA=25°C TA=70°C 3 2.4 15 2.3 TA=25°C TA=70°C 2.8 1.