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Green Product
STM105N
Ver 1.0
S a mHop Microelectronics C orp.
N-Channel Enhancement Mode Field Effect Transistor
PRODUCT SUMMARY
V DSS
100V
ID
6A
R DS(ON) (m Ω) Max
31 @ VGS=10V
FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package.
S O-8 1
ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous
b ae
Limit 100 ±20 TA=25°C TA=70°C
d
Units V V A A A mJ W W °C
6 4.8 30 169
-Pulsed Sigle Pulse Avalanche Energy Maximum Power Dissipation
a
TA=25°C TA=70°C
2.5 1.
STM105N Datasheet
