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STM201N - N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 4A R DS(ON) (m Ω) Typ 110 @ VGS=10V 170 @ VGS=4.5V S O-8 1.

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Datasheet Details

Part number STM201N
Manufacturer SamHop Microelectronics
File Size 181.19 KB
Description N-Channel MOSFET
Datasheet download datasheet STM201N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Green Product STM201N Ver 1.0 S a mHop Microelectronics C orp. N-Channel Logic Level Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 4A R DS(ON) (m Ω) Typ 110 @ VGS=10V 170 @ VGS=4.5V S O-8 1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TC=25°C TC=70°C 4 3.5 21 4 TC=25°C TC=70°C 3.4 2.