SamHop Microelectronics STM201N
N-Channel MOSFET
| Part No. | STM201N |
|---|---|
| Datasheet | STM201N Download |
| Manufacturer |  SamHop Microelectronics |
| Description | N-Channel MOSFET |
| Buy | Stock & Price |
FEATURES
Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 4A R DS(ON) (m Ω) Typ 110 @ VGS=10V 170 @ VGS=4.5V S O-8 1ABSOLUTE MAXIMUM RATINGS
( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TC=25°C TC=70°C 4 3.5 21 4 TC=25°C TC=70°C 3.4 2.4 -55 to 175 Units V V A A A mJ W W °C Single Pulse Avalanche Energy Maximum Power Dissipation a Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JA Thermal Resistance, Junction-to-Ambient a 44 °C/W Details are subject to change without notice. Oct,08,2010 1 STM201N Ver 1.0ELECTRICAL CHARACTERISTICS
( T A=25 °C unless otherwise noted ) Symbol Parameter Conditions Min Typ Max Units V 1 ±100 uA nA OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage IDSS IGSS Zero Gate Voltage Drain Current Gate-Body Leakage Current VGS=0V , ID=250uA VDS=80V , VGS=0V...
