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STM121N - Dual N-Channel MOSFET

Key Features

  • Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 2.8A R DS(ON) (m ) Max 155 @ VGS=10V 192 @ VGS=4.5V D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1.

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Datasheet Details

Part number STM121N
Manufacturer SamHop Microelectronics
File Size 99.68 KB
Description Dual N-Channel MOSFET
Datasheet download datasheet STM121N Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Gr Pr STM121N Ver 1.1 S a mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor PRODUCT SUMMARY V DSS 100V FEATURES Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ID 2.8A R DS(ON) (m ) Max 155 @ VGS=10V 192 @ VGS=4.5V D2 D2 D1 5 6 7 8 4 3 2 1 G2 S2 G1 S1 S O-8 1 D1 ABSOLUTE MAXIMUM RATINGS ( T A=25 °C unless otherwise noted ) Symbol VDS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous -Pulsed b d a Limit 100 ±20 TA=25°C TA=70°C 2.8 2.2 10 12 TA=25°C TA=70°C 2 1.