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STU616S Datasheet PDF

SamHop Microelectronics STU616S

N-Channel Logic Level Enhancement Mode Field Effect Transistor

Part No. STU616S
Datasheet STU616S Download
Manufacturer
SamHop Microelectronics
Description N-Channel Logic Level Enhancement Mode Field Effect Transistor
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STU616S datasheet page 1 preview

FEATURES

Super high dense cell design for low R DS(ON). Rugged and reliable. Suface Mount Package. ESD Protected. D G S G D S STU SERIES TO-252AA(D-PAK) STD SERIES TO-251(l-PAK) ABSOLUTE Symbol VDS VGS ID IDM IAS EAS PD TJ, TSTG

MAXIMUM RATINGS

( T C=25 °C unless otherwise noted ) Parameter Limit Drain-Source Voltage 60 Gate-Source Voltage ±20 a Drain Current-Continuous TA=25 °C 16 -Pulsed Avalanche Current Avalanche Energy c c a b Units V V A A A mJ W °C 46.8 9 20.25 TA=25 °C 60 -55 to 175 Maximum Power Dissipation Operating Junction and Storage Temperature Range THERMAL CHARACTERISTICS R JC Thermal Resistance, Junction-to-Case R JA Thermal Resistance, Junction-to-Ambient 2.5 50 °C/W °C/W Feb,12,2010 1 Downloaded from Elcodis.com electronic components distributor STU/D616S

ELECTRICAL CHARACTERISTICS

( T C=25 °C unless otherwise noted ) Symbol Parameter Conditions VGS=0V , ID=250uA VGS=0V , ID=10mA VDS=48V , VGS=0V Ver1.1 Min 60 65 Typ Max Units V V OFF CHARACTERISTICS Drain-Source Bre...
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