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SC8260S - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND.

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Datasheet Details

Part number SC8260S
Manufacturer SamHop
File Size 142.38 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8260S Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SC8260SGreen Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 1.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 10.5 @ VGS=4.5V 10.8 @ VGS=4.0V 20V 8A 11.8 @ VGS=3.8V 13.5 @ VGS=3.1V 16.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.61 0.03 BOTTOM VIEW 0.65 LAND PATTERN (REFERENCE) 0.65 S1 S2 G1 G2 S1 S2 0.65 0.65 0.65 0.65 2.55 0.03 8260S Date Code Mark area 1-pin index mark S1 0.13 0.03 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.31 φ 0.