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SC8272 - Dual N-Channel Enhancement Mode Field Effect Transistor

Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.90 0.03 8272 Date Code 1.90 0.03 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.210 0.010 0.107 0.007 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm.

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Datasheet Details

Part number SC8272
Manufacturer SamHop
File Size 152.75 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8272 Datasheet
Additional preview pages of the SC8272 datasheet.

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Full PDF Text Transcription

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SC8272Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 4.0 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 23.0 @ VGS=4.5V 24.0 @ VGS=4.0V 24V 6A 30.0 @ VGS=3.1V 35.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. WLCSP TOP VIEW 1.90 0.03 8272 Date Code 1.90 0.03 BOTTOM VIEW 0.65 G2 S2 G1 S1 0.65 1-pin index mark S1 Mark area 0.210 0.010 0.107 0.007 4 - φ 0.31 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 24 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±12 6 60 PT Total Power Dissipation a 1.
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