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SC8276 - Dual N-Channel Enhancement Mode Field Effect Transistor

Key Features

  • Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. TOP VIEW 1.85 0.03 BOTTOM VIEW 0.65 2.75 0.03 8276 Date Code Mark area 1-pin index mark S1 0.210 0.010 0.107 0.007 S1 S2 G1 G2 S1 S2 0.65 0.65 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.31 Unit : mm.

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Datasheet Details

Part number SC8276
Manufacturer SamHop
File Size 126.89 KB
Description Dual N-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet SC8276 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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SC8276Green Product Sa mHop Microelectronics C orp. Dual N-Channel Enhancement Mode Field Effect Transistor Ver 4.1 PRODUCT SUMMARY VSSS IS RSS(ON) (mΩ) Max 12.5 @ VGS=4.5V 13.0 @ VGS=4.0V 24V 8A 13.5 @ VGS=3.8V 18.0 @ VGS=3.1V 23.0 @ VGS=2.5V FEATURES Super high dense cell design for low RDS(ON). Rugged and reliable. Wafer level CSP. ESD Protected. TOP VIEW 1.85 0.03 BOTTOM VIEW 0.65 2.75 0.03 8276 Date Code Mark area 1-pin index mark S1 0.210 0.010 0.107 0.007 S1 S2 G1 G2 S1 S2 0.65 0.65 S1: Source 1 G1: Gate 1 G2: Gate 2 S2: Source 2 6 - φ 0.31 Unit : mm ABSOLUTE MAXIMUM RATINGS (TA=25°C) Symbol Parameter Limit VSSS Source-Source Voltage 24 VGSS IS ISP Gate-Source Voltage Source Current-Continuous a -Pulsed b ±12 8 80 PT Total Power Dissipation a 1.