Overview: K7D163674B K7D161874B
Document Title
16M DDR SYNCHRONOUS SRAM .. 512Kx36 & 1Mx18 SRAM Revision History
Rev No. Rev. 0.0 Rev. 0.1 History Initial document. Change JTAG DC OPERATING CONDITONS/AC TEST CONDITIONS -to support 1.8~2.5V VDD, change some items. Change DC CHARACTERISTICS (Stop Clock Standby Current) -ISB1 : 100 -> 150 Change JTAG Instruction Cording - For Reserved Change DC CHARACTERISTICS (Increase Operating Current) - x36 : add 40mA, x18 : add 60mA Add DC CHARACTERISTICS - VIN-CLK, VDIF-CLK, VCM-CLK Add AC INPUT CHARACTERISTICS Add INPUT DEFINITION Draft Data Oct. 2003 Nov. 2003 Remark Advance Preliminary Rev. 0.2 Feb. 2004 Preliminary Rev. 0.3 Feb. 2004 Preliminary Rev. 1.0 Mar. 2004 Final Rev. 1.1 Jan. 2004 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters. -1- Rev 1.1 Jan.
