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K7D163674B

Manufacturer: Samsung Semiconductor

K7D163674B datasheet by Samsung Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

K7D163674B datasheet preview

K7D163674B Datasheet Details

Part number K7D163674B
Datasheet K7D163674B K7D161874B Datasheet (PDF)
File Size 470.08 KB
Manufacturer Samsung Semiconductor
Description 512Kx36 & 1Mx18 SRAM
K7D163674B page 2 K7D163674B page 3

K7D163674B Overview

The K7D163674B and K7D161874B are 18,874,368 bit Synchronous Pipeline Burst Mode SRAM devices. Single differential HSTL level clock, K and K are used to initiate the read/write operation and all internal operations are self-timed. At the rising edge of K clock, all addresses and burst control inputs are registered internally.

K7D163674B Key Features

  • Free Running Active High and Active Low Echo Clock Output Pin
  • Asynchronous Output Enable
  • 512Kx36 & 1Mx18 SRAM
  • Registered Addresses, Burst Control and Data Inputs
  • Registered Outputs
  • Double and Single Data Rate Burst Read and Write
  • Burst Count Controllable With Max Burst Length of 4
  • Interleved and Linear Burst mode support
  • Bypass Operation Support
  • Programmable Impedance Output Drivers
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More Datasheets from Samsung Semiconductor

View all Samsung Semiconductor datasheets

Part Number Description
K7D161874B 512Kx36 & 1Mx18 SRAM
K7D321874A 32Mb A-die DDR SRAM
K7D321874C 1Mx36 & 2Mx18 SRAM
K7D323674A 32Mb A-die DDR SRAM
K7D323674C 1Mx36 & 2Mx18 SRAM

K7D163674B Distributor

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