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KM23C8105D - 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM

General Description

The KM23C8105D(G) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes page read mode fun

Key Features

  • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode).
  • Fast access time Random Access : 100ns(Max. ) Page Access : 30ns(Max. ).
  • 4 Words / 8 bytes page access.
  • Supply voltage : single +5V.
  • Current consumption Operating : 80mA(Max. ) Standby : 50µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. KM23C8105D : 42-DIP-600 -. KM23C8105DG : 44-SOP-600.

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www.DataSheet4U.com KM23C8105D(G) 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access • Supply voltage : single +5V • Current consumption Operating : 80mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23C8105D : 42-DIP-600 -. KM23C8105DG : 44-SOP-600 CMOS MASK ROM GENERAL DESCRIPTION The KM23C8105D(G) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on BHE voltage level.