KM23C8105DG Datasheet PDF - Samsung Semiconductor 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM Specs

KM23C8105DG - 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM

This page provides the datasheet information for the KM23C8105DG, a member of the KM23C8105D 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM family.

Datasheet Summary

Description

The KM23C8105D(G) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device includes page read mode fun

Features

Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode).
Fast access time Random Access : 100ns(Max. ) Page Access : 30ns(Max. ).
4 Words / 8 bytes page access.
Supply voltage : single +5V.
Current consumption Operating : 80mA(Max. ) Standby : 50µA(Max. ).
Fully static operation.
All inputs and outputs TTL compatible.
Three state outputs.
Package -. KM23C8105D : 42-DIP-600 -. KM23C8105DG : 44-SOP-600.

Datasheet Details

Part number	KM23C8105DG
Manufacturer	Samsung Semiconductor
File Size	107.77 KB
Description	8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
Datasheet	KM23C8105DG Datasheet
Additional preview pages of the KM23C8105DG datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.com KM23C8105D(G) 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,576 x 8(byte mode) 524,288 x 16(word mode) • Fast access time Random Access : 100ns(Max.) Page Access : 30ns(Max.) • 4 Words / 8 bytes page access • Supply voltage : single +5V • Current consumption Operating : 80mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23C8105D : 42-DIP-600 -. KM23C8105DG : 44-SOP-600 CMOS MASK ROM GENERAL DESCRIPTION The KM23C8105D(G) is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x 8 bit(byte mode) or as 524,288 x 16 bit(word mode) depending on BHE voltage level.

Published: Feb 2, 2008 |