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KM23C8100DET Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

KM23C8100DET datasheet preview

Datasheet Details

Part number KM23C8100DET
Datasheet KM23C8100DET KM23C8100DT Datasheet (PDF)
File Size 81.42 KB
Manufacturer Samsung Semiconductor
Description 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
KM23C8100DET page 2 KM23C8100DET page 3

KM23C8100DET Overview

The KM23C8100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single power supply, and all inputs and outputs are TTL patible. Because of its asynchronous operation, it requires no external...

KM23C8100DET Key Features

  • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode)
  • Fast access time : 100ns(Max.)
  • Supply voltage : single +5V
  • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.)
  • Fully static operation
  • All inputs and outputs TTL patible
  • Three state outputs
  • Package -. KM23C8100D(E)T : 44-TSOP2-400
  • A0 A-1
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KM23C8100DT 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
KM23C8100ET 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
KM23C8105D 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
KM23C8105DET 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
KM23C8105DG 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
KM23C8105DT 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
KM23C8105ET 8M-Bit (1Mx8 /512Kx16) CMOS Mask ROM
KM23C32000 32M-Bit (2Mx16) CMOS Mask ROM
KM23C32000A 32M-Bit (2Mx16) CMOS Mask ROM
KM23C32000AG 32M-Bit (4Mx8 / 2Mx16) CMOS Mask ROM

KM23C8100DET Distributor

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