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KM23C8100ET - 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM

This page provides the datasheet information for the KM23C8100ET, a member of the KM23C8100DT 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM family.

Datasheet Summary

Description

The KM23C8100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single po

Features

  • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode).
  • Fast access time : 100ns(Max. ).
  • Supply voltage : single +5V.
  • Current consumption Operating : 50mA(Max. ) Standby : 50µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. KM23C8100D(E)T : 44-TSOP2-400 CMOS MASK ROM.

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Datasheet preview – KM23C8100ET

Datasheet Details

Part number KM23C8100ET
Manufacturer Samsung Semiconductor
File Size 81.42 KB
Description 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM
Datasheet download datasheet KM23C8100ET Datasheet
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www.DataSheet4U.com KM23C8100D(E)T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23C8100D(E)T : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The KM23C8100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.
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