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KM23C8100ET - 8M-Bit (1Mx8 / 512Kx16) CMOS Mask ROM

Download the KM23C8100ET datasheet PDF. This datasheet also covers the KM23C8100DT variant, as both devices belong to the same 8m-bit (1mx8 / 512kx16) cmos mask rom family and are provided as variant models within a single manufacturer datasheet.

General Description

The KM23C8100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.(See mode selection table) This device operates with a 5V single po

Key Features

  • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode).
  • Fast access time : 100ns(Max. ).
  • Supply voltage : single +5V.
  • Current consumption Operating : 50mA(Max. ) Standby : 50µA(Max. ).
  • Fully static operation.
  • All inputs and outputs TTL compatible.
  • Three state outputs.
  • Package -. KM23C8100D(E)T : 44-TSOP2-400 CMOS MASK ROM.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (KM23C8100DT_SamsungSemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com KM23C8100D(E)T 8M-Bit (1Mx8 /512Kx16) CMOS MASK ROM FEATURES • Switchable organization 1,048,5762 x 8(byte mode) 524,288 x 16(word mode) • Fast access time : 100ns(Max.) • Supply voltage : single +5V • Current consumption Operating : 50mA(Max.) Standby : 50µA(Max.) • Fully static operation • All inputs and outputs TTL compatible • Three state outputs • Package -. KM23C8100D(E)T : 44-TSOP2-400 CMOS MASK ROM GENERAL DESCRIPTION The KM23C8100D(E)T is a fully static mask programmable ROM fabricated using silicon gate CMOS process technology, and is organized either as 1,048,576 x8 bit(byte mode) or as 524,288 x16 bit(word mode) depending on BHE voltage level.