KM432D2131 Overview
FOR 512K x 32Bit x 4 Bank DDR SGRAM The KM432D2131 is 67,108,864 bits of hyper synchronous data rate Dynamic GRAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.
KM432D2131 Key Features
- 3.3V ±5% power supply for device operation
- 2.5V ±5% power supply for I/O interface
- SSTL_2 patible inputs/outputs
- 4 banks operation
- MRS cycle with address key programs -. Read latency 2, 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (
- Full page burst length for sequential burst type only
- Start address of the full page burst should be even
- All inputs except data & DM are sampled at the positive going edge of the system clock
- Differential clock input
- Data I/O transactions on both edges of Data strobe