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KM432D2131 - 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM

This page provides the datasheet information for the KM432D2131, a member of the KM432D2131TQ 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM family.

Datasheet Summary

Description

The KM432D2131 is 67,108,864 bits of hyper synchronous data rate Dynamic GRAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

  • 3.3V ±5% power supply for device operation.
  • 2.5V ±5% power supply for I/O interface.
  • SSTL_2 compatible inputs/outputs.
  • 4 banks operation.
  • MRS cycle with address key programs -. Read latency 2, 3 (clock) -. Burst length (2, 4, 8 and Full page) -. Burst type (sequential & interleave).
  • Full page burst length for sequential burst type only.
  • Start address of the full page burst should be even.
  • All inputs except data & DM are sam.

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Datasheet preview – KM432D2131

Datasheet Details

Part number KM432D2131
Manufacturer Samsung Semiconductor
File Size 806.39 KB
Description 512K X 32Bit X 4 Banks Double Data Rate Synchronous Graphic RAM
Datasheet download datasheet KM432D2131 Datasheet
Additional preview pages of the KM432D2131 datasheet.

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Full PDF Text Transcription

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www.DataSheet4U.net KM432D2131 Target 64M DDR SGRAM 64Mbit DDR SGRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe Revision 0.3 May 1999 Samsung Electronics reserves the right to change products or specification without notice. - 1 - Rev. 0.3 (May. 1999) KM432D2131 Revision History Revision 0.3 (May 1999) • Corrected tRDL related typo. Target 64M DDR SGRAM Revision 0.0 (December 1998) - Target Spec • Defined Target Specification - 2 - Rev. 0.3 (May. 1999) KM432D2131 Target 64M DDR SGRAM 512K x 32Bit x 4 Banks Double Data Rate Synchronous Graphic RAM with Bi-directional Data Strobe FEATURES • 3.3V ±5% power supply for device operation • 2.
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