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KM732V596A - 32Kx32-Bit Synchronous Pipelined Burst SRAM

General Description

The KM732V596A/L is a 1,048,576 bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based Mobile System.

Key Features

  • Synchronous Operation. 2 Stage Pipelined operation with 4 Burst. On-Chip Address Counter. Write Self-Timed Cycle. On-Chip Address and Control Registers. VDD=3.3V-5%/+10% Power Supply for 3.3V I/O. VDD=3.3V±5% Power Supply for 2.5V I/O. I/O Supply Voltage : 3.3V-5%/+10% for 3.3V I/O or 2.5V+0.4V/-0.13V for 2.5V I/O 5V T.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY KM732V596A/L Document Title 32Kx32-Bit Synchronous Pipelined Burst SRAM, 3.3V Power, 3.3V or 2.5V I/O Datasheets for 100TQFP 32Kx32 Synchronous SRAM Revision History Rev. No. Rev.0.0 Rev 1.0 History Initial draft Final spec release Draft Date Oct. 28. 1996 May. 13. 1997 Remark Preliminary Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- May 1997 Rev 1.