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KMM5368003BSW - 8MB X 36 DRAM Simm Using 4MB X 16 & Quad Cas 4Mb X 4

General Description

The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module.

The Samsung KMM5368003B consists of four CMOS 4Mx16bits and two CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate.

Key Features

  • Part Identification - KMM5368003BSW(4K cycles/64ms Ref, TSOP, Solder) - KMM5368003BSWG(4K cycles/64ms Ref, TSOP, Gold).
  • Fast Page Mode Operation.
  • CAS-before-RAS & Hidden Refresh capability.
  • RAS-only refresh capability.
  • TTL compatible inputs and outputs.
  • Single +5V±10% power supply.
  • JEDEC standard PDpin & pinout.
  • PCB : Height(1000mil), double sided component.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DRAM MODULE KMM5368003BSW/BSWG KMM5368003BSW/BSWG Fast Page Mode 8M x 36 DRAM SIMM Using 4Mx16 & Quad CAS 4Mx4, 4K Refresh, 5V GENERAL DESCRIPTION The Samsung KMM5368003B is a 8Mx36bits Dynamic RAM high density memory module. The Samsung KMM5368003B consists of four CMOS 4Mx16bits and two CMOS Quad CAS 4Mx4bits DRAMs in TSOP packages mounted on a 72-pin glass-epoxy substrate. A 0.1 or 0.22uF decoupling capacitor is mounted on the printed circuit board for each DRAM. The KMM5368003B is a Single In-line Memory Module with edge connections and is intended for mounting into 72 pin edge connector sockets.