K4S510432B-TC75 Datasheet | Samsung Semiconductor

SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 512Mb B-die SDRAM Specification Revision 1.1 February 2004 - Samsung Electronics reserves the right to change products or specification without notice. Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) Revision History Revision 1.0 (January, 2004) - First release. Revision 1.1 (February, 2004) - Corrected typo. CMOS SDRAM Rev. 1.1 February 2004 SDRAM 512Mb B-die (x4, x8, x16) CMOS SDRAM 32M x 4Bit x 4 Banks / 16M x 8Bit x 4 Banks / 8M x 16Bit x 4 Banks SDRAM Features - JEDEC standard 3.3V power supply - LVTTL patible with multiplexed address - Four banks operation - MRS cycle with address key programs -. CAS latency (2 & 3) -....