Description
The K4S510432B / K4S510832B / K4S511632B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 33,554,432 words by 4 bits / 4 x 16,777,216 words by 8 bits / 4 x 8,388,608 words by 16 bits, fabricated with SAMSUNG's high performance CMOS technology.
Features
- JEDEC standard 3.3V power supply.
- LVTTL compatible with multiplexed address.
- Four banks operation.
- MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8) -. Burst type (Sequential & Interleave).
- All inputs are sampled at the positive going edge of the system clock.
- Burst read single-bit write operation.
- DQM (x4,x8) & L(U)DQM (x16) for masking.
- Auto & self refresh.
- 64ms refresh peri.
K4S510432B-TC75 Datasheet
