Datasheet4U Logo Datasheet4U.com

K4S510732B Datasheet Stacked 512mbit Sdram

Manufacturer: Samsung Semiconductor

Overview: Preliminary K4S510732B CMOS SDRAM Stacked 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL .. Revision 0.0 Feb. 2001 * Samsung Electronics reserves the right to change products or specification without Rev. 0.0 Feb.2001 Preliminary K4S510732B CMOS SDRAM Revision 0.0 (Feb., 2001) Rev. 0.0 Feb.

General Description

The K4S510732B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock I/O transactions are possible on every clock cycle.

Range of operating frequencies, programmable burst length and programmable latencies allow the same device to be useful for a variety of high bandwidth, high performance memory system applications.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K Cycle.

More Datasheets from Samsung Semiconductor

Part Number Description
K4S510432B-TC 512Mb B-die SDRAM Specification
K4S510432B-TC75 512Mb B-die SDRAM Specification
K4S510432B-TCL75 512Mb B-die SDRAM Specification
K4S510432M 512Mbit SDRAM 32M x 4bit x 4 Banks Synchronous DRAM LVTTL
K4S510832B-TC75 512Mb B-die SDRAM Specification
K4S510832B-TCL75 512Mb B-die SDRAM Specification
K4S510832M 16M x 8bit x 4 Banks Synchronous DRAM LVTTL
K4S511533F-YC 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YF 8M x 16Bit x 4 Banks Mobile SDRAM
K4S511533F-YL 8M x 16Bit x 4 Banks Mobile SDRAM

K4S510732B Distributor