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K4S510732B - Stacked 512Mbit SDRAM

General Description

The K4S510732B is 536,870,912 bits synchronous high data rate Dynamic RAM organized as 4 x 16,777,216 words by 8 bits, fabricated with SAMSUNG's high performance CMOS technology.

Key Features

  • JEDEC standard 3.3V power supply.
  • LVTTL compatible with multiplexed address.
  • Four banks operation.
  • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave).
  • All inputs are sampled at the positive going edge of the system clock.
  • Burst read single-bit write operation.
  • DQM for masking.
  • Auto & self refresh.
  • 64ms refresh period (8K Cycle.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4S510432B-TC 512Mb B-die SDRAM Specification
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K4S510832B-TC75 512Mb B-die SDRAM Specification

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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Preliminary K4S510732B CMOS SDRAM Stacked 512Mbit SDRAM 16M x 8bit x 4 Banks Synchronous DRAM LVTTL www.DataSheet4U.com Revision 0.0 Feb. 2001 * Samsung Electronics reserves the right to change products or specification without Rev. 0.0 Feb.2001 Preliminary K4S510732B CMOS SDRAM Revision 0.0 (Feb., 2001) Rev. 0.0 Feb.2001 Preliminary K4S510732B 16M x 8Bit x 4 Banks Synchronous DRAM FEATURES • JEDEC standard 3.3V power supply • LVTTL compatible with multiplexed address • Four banks operation • MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) • All inputs are sampled at the positive going edge of the system clock.