K4S643232C - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL

This page provides the datasheet information for the K4S643232C, a member of the K4S 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL family.

Product Overview

Samsung semiconductor

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Datasheet Details

Part number	K4S643232C
Manufacturer	Samsung semiconductor
File Size	1.13 MB
Description	2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	K4S643232C Datasheet
Additional preview pages of the K4S643232C datasheet.

K4S643232C Product details

Description

The K4S643232C is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 524,288 words by 32 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Synchronous design allows precise cycle control with the use of system clock.

Features

3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 15.6us refresh duty cycle CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

K4S643232E - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL(3.3V)
K4S643232F - 2M x 32 SDRAM 512K x 32bit x 4 Banks Synchronous DRAM LVTTL
K4S643233F-SDE - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDI - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDN - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SDP - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SE - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM
K4S643233F-SI - 2Mx32 Mobile SDRAM 90FBGA CMOS SDRAM

Published: Apr 7, 2005 |