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K6F1016U4B - CMOS SRAM

Datasheet Summary

Features

  • Process Technology: Full CMOS.
  • Organization: 64K x16 bit.
  • Power Supply Voltage: 2.7~3.3V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three state output status and TTL Compatible.
  • Package Type: 48-FBGA-6.00x7.00.

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Datasheet Details

Part number K6F1016U4B
Manufacturer Samsung semiconductor
File Size 157.04 KB
Description CMOS SRAM
Datasheet download datasheet K6F1016U4B Datasheet
Additional preview pages of the K6F1016U4B datasheet.

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K6F1016U4B Family Preliminary CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date May 2, 2000 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. - 1 - Revision 0.0 May 2000 K6F1016U4B Family Preliminary CMOS SRAM 64K x 16 bit Super Low Power and Low Voltage Full CMOS Static RAM FEATURES • Process Technology: Full CMOS • Organization: 64K x16 bit • Power Supply Voltage: 2.7~3.3V • Low Data Retention Voltage: 1.
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