K6F1016U4B Key Features
- Process Technology: Full CMOS
- Organization: 64K x16 bit
- Power Supply Voltage: 2.7~3.3V
- Low Data Retention Voltage: 1.5V(Min)
- Three state output status and TTL patible
- Package Type: 48-FBGA-6.00x7.00
- Part: K6F1016U4B
- Manufacturer: Samsung Semiconductor
- Size: 157.04 KB
Related Samsung Semiconductor Datasheets
| Part Number | Description |
|---|---|
| K6F1008V2C | 128Kx8 bit Super Low Power and Low Voltage CMOS Static RAM |
| K6F1616R6A | CMOS SRAM |
| K6F1616R6C | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
| K6F1616T6B-EF55 | 1M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM |
K6F1016U4B Description
K6F1016U4B Family Preliminary CMOS SRAM Document Title 64K x16 bit Super Low Power and Low Voltage Full CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft Draft Date May 2, 2000 Remark Preliminary The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD.