K6F1616T6B
Description
The K6F1616T6B families are fabricated by SAMSUNG′s advanced full CMOS process technology. The families support industrial operating temperature ranges.
Key Features
- Process Technology: Full CMOS
- Organization: 1M x16
- Power Supply Voltage: 2.7~3.6V
- Low Data Retention Voltage: 1.5V(Min)
- Three State Outputs
- Package Type: 48-TSOP1-1220F, 48-TBGA
- 7.00x7.00 CMOS SRAM
