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K6F3216T6M - 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM

Description

The K6F3216T6M families are fabricated by SAMSUNG′s advanced full CMOS process technology.

The families support industrial operating temperature ranges and have chip scale package for user flexibility of system design.

Features

  • Process Technology: Full CMOS.
  • Organization: 2M x16.
  • Power Supply Voltage: 2.7~3.6V.
  • Low Data Retention Voltage: 1.5V(Min).
  • Three State Outputs.
  • Package Type: 55-TBGA-7.50x12.00 CMOS SRAM.

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Datasheet preview – K6F3216T6M

Datasheet Details

Part number K6F3216T6M
Manufacturer Samsung semiconductor
File Size 167.24 KB
Description 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM
Datasheet download datasheet K6F3216T6M Datasheet
Additional preview pages of the K6F3216T6M datasheet.

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Full PDF Text Transcription

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K6F3216T6M Family Document Title 2M x16 bit Super Low Power and Low Voltage Full CMOS Static RAM CMOS SRAM Revision History Revision No. History 1.0 Draft Date November 4, 2003 Remark Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 November 2002 K6F3216T6M Family FEATURES • Process Technology: Full CMOS • Organization: 2M x16 • Power Supply Voltage: 2.7~3.6V • Low Data Retention Voltage: 1.5V(Min) • Three State Outputs • Package Type: 55-TBGA-7.50x12.
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