| Part number | K6T4008C1B |
|---|---|
| Datasheet | K6T4008C1B-Samsungsemiconductor.pdf |
| File Size | 167.82 KB |
| Manufacturer | Samsung Semiconductor |
| Description | CMOS SRAM |
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K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write.
See all Samsung Semiconductor datasheets
| Part Number | Description |
|---|---|
| K6T4008C1C | CMOS SRAM |
| K6T4008U1C | CMOS SRAM |
| K6T4008V1C | CMOS SRAM |
| K6T4016U3C | CMOS SRAM |
| K6T4016U4C | CMOS SRAM |
| K6T4016V3C | CMOS SRAM |
| K6T4016V4C | CMOS SRAM |
| K6T0808C1D | CMOS SRAM |
| K6T0808U1D | CMOS SRAM |
| K6T0808V1D | CMOS SRAM |
