K6T4008C1B - CMOS SRAM

Samsung Semiconductor

Datasheet Details

Part number	K6T4008C1B
Manufacturer	Samsung Semiconductor
File Size	167.82 KB
Description	CMOS SRAM
Datasheet	K6T4008C1B Datasheet

Full PDF Text Transcription for K6T4008C1B (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6T4008C1B. For precise diagrams, and layout, please refer to the original PDF.

K6T4008C1B Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Initial Draft 0.1 Revise - Changed Operating current by re...

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History 0.0 Initial Draft 0.1 Revise - Changed Operating current by reticle revision ICC at write : 35mA → 45mA ICC1 at read/write : 15/35mA → 10/45mA 1.0 Finalize - Changed Operating current ICC1 at write : 45mA → 40mA ICC2; 90mA → 80mA - Change test load at 55ns : 100pF → 50pF 2.0 Revise - Change datasheet format 3.0 Revise - Industrial product speed bin change:70/100ns → 55/70ns CMOS SRAM Draft Date December 7, 1996 Remark Advance March 6, 1997 Preliminary October 9, 1997 Final February 17, 1998 Final September 8, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reser

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