K6T4016U3C - CMOS SRAM

This page provides the datasheet information for the K6T4016U3C, a member of the K6T4016V3C CMOS SRAM family.

Samsung semiconductor

Datasheet Details

Part number	K6T4016U3C
Manufacturer	Samsung semiconductor
File Size	151.65 KB
Description	CMOS SRAM
Datasheet	K6T4016U3C Datasheet
Additional preview pages of the K6T4016U3C datasheet.

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Full PDF Text Transcription

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K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 Initial draft 0.1 0.11 Revised - Speed bin change Commercial : 70/85ns → 70/85/100ns Industrial : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 5mA → 6mA ICC2 : 50mA → 45mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts Errata correction 1.0 Finalize Draft Date January 13, 1998 June 12, 1998 Remark Advance Preliminary August 13, 1998 November 16, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device.

Published: Dec 8, 2017 |