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K6T4016U3C - CMOS SRAM

Download the K6T4016U3C datasheet PDF. This datasheet also covers the K6T4016V3C variant, as both devices belong to the same cmos sram family and are provided as variant models within a single manufacturer datasheet.

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Note: The manufacturer provides a single datasheet file (K6T4016V3C-Samsungsemiconductor.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription for K6T4016U3C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6T4016U3C. For precise diagrams, and layout, please refer to the original PDF.

K6T4016V3C, K6T4016U3C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No History 0.0 Initial draft 0.1 0....

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MOS SRAM Revision History Revision No History 0.0 Initial draft 0.1 0.11 Revised - Speed bin change Commercial : 70/85ns → 70/85/100ns Industrial : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 5mA → 6mA ICC2 : 50mA → 45mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts Errata correction 1.0 Finalize Draft Date January 13, 1998 June 12, 1998 Remark Advance Preliminary August 13, 1998 November 16, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSU