K6T4016V4C - CMOS SRAM

Features

Process Technology: TFT.
Organization: 256K x16.
Power Supply Voltage K6T4016V4C Family: 3.0~3.6V K6T4016U4C Family: 2.7~3.3V.
Low Data Retention Volt.

Samsung semiconductor

Datasheet Details

Part number	K6T4016V4C
Manufacturer	Samsung semiconductor
File Size	106.34 KB
Description	CMOS SRAM
Datasheet	K6T4016V4C Datasheet
Additional preview pages of the K6T4016V4C datasheet.

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Full PDF Text Transcription

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K6T4016V4C, K6T4016U4C Family Document Title 256Kx16 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 Initial draft - UB/LB power control 0.01 Errata correction 0.1 Revise - Add 3,3V product : K6T4016V4C 1.0 Revise - Specified CSP type. Draft Date July 4, 1998 Remark Preliminary August 17, 1998 September 11, 1998 Preliminary November 16, 1998 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.

Published: Mar 19, 2018 |