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K6T4008C1C - CMOS SRAM

General Description

The K6T4008C1C families are fabricated by SAMSUNG′s advanced CMOS process technology.

Key Features

  • Process Technology: TFT.
  • Organization: 512Kx8.
  • Power Supply Voltage: 4.5~5.5V.
  • Low Data Retention Voltage: 2V(Min).
  • Three state output and TTL Compatible.
  • Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R.

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Full PDF Text Transcription for K6T4008C1C (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for K6T4008C1C. For precise diagrams, and layout, please refer to the original PDF.

K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 1.0 Finalize CMOS SRAM Draft Date October 20...

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History 0.0 Initial draft 1.0 Finalize CMOS SRAM Draft Date October 20,1998 April 12, 1999 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 April 1999 K6T4008C1C Family CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES • Process Technology: TFT • Organization: 512Kx8 • Power Supply Voltage: 4.5~5.

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