K6T4008C1C - CMOS SRAM

Description

The K6T4008C1C families are fabricated by SAMSUNG′s advanced CMOS process technology.

Features

Process Technology: TFT.
Organization: 512Kx8.
Power Supply Voltage: 4.5~5.5V.
Low Data Retention Voltage: 2V(Min).
Three state output and TTL Compatible.
Package Type: 32-DIP-600, 32-SOP-525, 32-TSOP2-400F/R.

Samsung semiconductor

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Datasheet Details

Part number	K6T4008C1C
Manufacturer	Samsung semiconductor
File Size	166.79 KB
Description	CMOS SRAM
Datasheet	K6T4008C1C Datasheet
Additional preview pages of the K6T4008C1C datasheet.

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Full PDF Text Transcription

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K6T4008C1C Family Document Title 512Kx8 bit Low Power CMOS Static RAM Revision History Revision No. History 0.0 Initial draft 1.0 Finalize CMOS SRAM Draft Date October 20,1998 April 12, 1999 Remark Preliminary Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and products. SAMSUNG Electronics will answer to your questions about device. If you have any questions, please contact the SAMSUNG branch offices. 1 Revision 1.0 April 1999 K6T4008C1C Family CMOS SRAM 512Kx8 bit Low Power CMOS Static RAM FEATURES • Process Technology: TFT • Organization: 512Kx8 • Power Supply Voltage: 4.5~5.

Published: Dec 8, 2017 |