K6T4008V1C - CMOS SRAM

Samsung Semiconductor

Datasheet Details

Part number	K6T4008V1C
Manufacturer	Samsung Semiconductor
File Size	183.56 KB
Description	CMOS SRAM
Datasheet	K6T4008V1C Datasheet

Full PDF Text Transcription for K6T4008V1C (Reference)

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K6T4008V1C, K6T4008U1C Family Document Title 512Kx8 bit Low Power and Low Voltage CMOS Static RAM CMOS SRAM Revision History Revision No. History 0.0 Initial Draft 0.1 Re...

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OS SRAM Revision History Revision No. History 0.0 Initial Draft 0.1 Revisied - Speed bin change KM68U4000C : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1 : 3mA → 4mA ICC2 : 35mA → 30mA ISB : 0.5mA → 0.3mA ISB1 : 10µA → 15µA for commercial parts - Add 32-TSOP1-0820 0.11 Errata correct - 32-TSOP1-0813 products: T → TG 1.0 Finalize Draft Data January 13, 1998 June 12, 1998 Remark Advance Preliminary November 7, 1998 January 15, 1999 Final The attached datasheets are provided by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications and

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