K6T4016V3C Overview
70/85ns → 70/85/100ns Industrial : 85/100ns → 70/85/100ns - DC Characteristics change ICC : 5mA at read/write → 4mA at read ICC1.
K6T4016V3C Details
| Part number | K6T4016V3C |
|---|---|
| Datasheet | K6T4016V3C-Samsungsemiconductor.pdf |
| File Size | 151.65 KB |
| Manufacturer | Samsung Semiconductor |
| Description | CMOS SRAM |
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