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K7B321825M Datasheet

Manufacturer: Samsung Semiconductor
K7B321825M datasheet preview

Datasheet Details

Part number K7B321825M
Datasheet K7B321825M_Samsungsemiconductor.pdf
File Size 304.66 KB
Manufacturer Samsung Semiconductor
Description 1Mx36 & 2Mx18 Synchronous SRAM
K7B321825M page 2 K7B321825M page 3

K7B321825M Overview

The K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers, a 2-bit burst addr.

K7B321825M Key Features

  • Synchronous Operation
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • 3.3V+0.165V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
  • LBO Pin allows a choice of either a interleaved burst or a linear burst
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K7B321825M Distributor

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