Datasheet Details
| Part number | K7B321835C |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 477.15 KB |
| Description | 1Mx36 & 2Mx18 Synchronous SRAM |
| Datasheet |
 K7B321835C Datasheet
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General Description
The K7B323635C and K7B321835C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.
Key Features
- Synchronous Operation.
- On-Chip Address Counter.
- Self-Timed Write Cycle.
- On-Chip Address and Control Registers.
- VDD= 2.5 or 3.3V +/- 5% Power Supply.
- 5V Tolerant Inputs Except I/O Pins.
- Byte Writable Function.
- Global Write Enable Controls a full bus-width write.
- Power Down State via ZZ Signal.
- LBO Pin allows a choice of either a interleaved burst or a linear burst.
- Three Chip Enables for.