K7B321835C
K7B321835C is 1Mx36 & 2Mx18 Synchronous SRAM manufactured by Samsung Semiconductor.
FEATURES
- Synchronous Operation.
- On-Chip Address Counter.
- Self-Timed Write Cycle.
- On-Chip Address and Control Registers.
- VDD= 2.5 or 3.3V +/- 5% Power Supply.
- 5V Tolerant Inputs Except I/O Pins.
- Byte Writable Function.
- Global Write Enable Controls a full bus-width write.
- Power Down State via ZZ Signal.
- LBO Pin allows a choice of either a interleaved burst or a linear burst.
- Three Chip Enables for simple depth expansion with No Data Contention only for LQFP.
- Asynchronous Output Enable Control.
- ADSP, ADSC, ADV Burst Control Pins.
- TTL-Level Three-State Output.
- 100-LQFP-1420A (Lead and Lead free package)
- Operating in meical and industrial temperature range.
GENERAL DESCRIPTION
The K7B323635C and K7B321835C are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It...
