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K7B323625M Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

K7B323625M datasheet preview

Datasheet Details

Part number K7B323625M
Datasheet K7B323625M K7B321825M Datasheet (PDF)
File Size 304.66 KB
Manufacturer Samsung Semiconductor
Description 1Mx36 & 2Mx18 Synchronous SRAM
K7B323625M page 2 K7B323625M page 3

K7B323625M Overview

The K7B323625M and K7B321825M are 37,748,736-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 1M(2M) words of 36(18) bits and integrates address and control registers, a 2-bit burst addr.

K7B323625M Key Features

  • Synchronous Operation
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • 3.3V+0.165V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
  • LBO Pin allows a choice of either a interleaved burst or a linear burst
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K7B323635C 1Mx36 & 2Mx18 Synchronous SRAM
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K7B161825A 512Kx36 & 1Mx18 Synchronous SRAM
K7B163625A 512Kx36 & 1Mx18 Synchronous SRAM
K7B401825B 128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B403225B 128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B403625B 128Kx36/x32 & 256Kx18 Synchronous SRAM
K7B403625M 128Kx36-Bit Synchronous Burst SRAM
K7B801825B 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM

K7B323625M Distributor

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