• Part: K7I161882B
  • Description: 1Mx18-bit DDRII CIO b2 SRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 404.76 KB
Download K7I161882B Datasheet PDF
Samsung Semiconductor
K7I161882B
K7I161882B is 1Mx18-bit DDRII CIO b2 SRAM manufactured by Samsung Semiconductor.
- Part of the K7I163682B comparator family.
FEATURES - 1.8V+0.1V/-0.1V Power Supply. - DLL circuitry for wide output data valid window and future freguency scaling. - I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O. - Pipelined, double-data rate operation. - mon data input/output bus . - HSTL I/O - Full data coherency, providing most current data. - Synchronous pipeline read with self timed late write. - Registered address, control and data input/output. - DDR(Double Data Rate) Interface on read and write ports. - Fixed 2-bit burst for both read and write operation. - Clock-stop supports to reduce current. - Two input clocks(K and K) for accurate DDR timing at clock rising edges only. - Two input clocks for output data(C and C) to minimize clock-skew and flight-time mismatches. - Two echo clocks (CQ and CQ) to enhance output data traceability. - Single address bus. - Byte write (x18, x36) function. - Simple depth expansion with no data contention. - Programmable output impedance. - JTAG 1149.1 patible test access port. - 165FBGA(11x15 ball array FBGA) with body size of 13x15mm Organization Part Number...