K7I321882M Datasheet | Samsung Semiconductor

features and the timing waveforms regarding the burst controllability. - Remended DC operating conditions for Clock added. - AC test conditions for V DDQ=1.8V and Single ended clock added. (AC Test Conditions 2) - Package thermal characteristics added. - Add-HC35 part(Part Number, Idd, AC Characteristics) - Absolute Maximum Rating VDDQ changed from 2.825V to 2.4V - V CM-CLK Min changed from 0.6V to 0.68V - Add-HC37 part(Part Number, Idd, AC Characteristics) Draft Data July. 2000 Aug. 2000 Oct. 2000 Remark Advance Advance Advance Rev. 0.3 Nov. 2000 Advance Rev. 0.5 Rev. 0.6 Rev. 0.7 Jan. 2001 Feb. 2001 Mar. 2001 Prelimary Prelimary Prelimary Rev. 1.0 May. 2001 Final Rev. 2.0 Rev. 3.0 Sep. 2001 Jan. 2002 Final Final Rev. 4.0 Jan. 2002 Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or cortact Headquarters. -1- January. 2002 Rev 4.0 K7D803671B K7D801871B FEATURES - - - - - - - - - - - - - - - - - 256Kx36 & 512Kx18 SRAM Maximum Frequency 370MHz 357MHz 333MHz 300MHz 250MHz 370MHz 357MHz 333MHz 300MHz 250MHz Access Time 1.7- 1.7- 1.7- 1.9- 2.0- 1.7- 1.7- 1.7- 1.9- 2.0- Organization Part Number 256Kx36 or 512Kx18 Organizations. Maximum Frequency : 370MHz (Data Rate : 740Mbps) 2.5V V DD/1.5V VDDQ (2.0V max VDDQ). K7D803671B-HC37 HSTL Input and Outputs. K7D803671B-HC35 Single Differential HSTL Clock. 256Kx36 K7D803671B-HC33 Synchronous Pipeline Mode of Operation with Self-Timed Late Write. Free Running Active High and Active Low Echo Clock Output Pin. K7D803671B-HC30 Asynchronous Output Enable. K7D803671B-HC25 Registered...