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K7I163682B - (K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM

Datasheet Summary

Description

Input Clock Input Clock for Output Data Output Echo Clock DLL Disable when low Burst Count Address Inputs Address Inputs Data Inputs Outputs Read, Write Control Pin, Read active when high Synchronous Load Pin, bus Cycle sequence is to be defined when low Block Write Control Pin,active when low Input

Features

  • 1.8V+0.1V/-0.1V Power Supply.
  • DLL circuitry for wide output data valid window and future freguency scaling.
  • I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
  • Pipelined, double-data rate operation.
  • Common data input/output bus.
  • HSTL I/O.
  • Full data coherency, providing most current data.
  • Synchronous pipeline read with self timed late write.
  • Registered address, control and data inp.

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Datasheet Details

Part number K7I163682B
Manufacturer Samsung semiconductor
File Size 404.76 KB
Description (K7I163682B / K7I161882B) 1Mx18-bit DDRII CIO b2 SRAM
Datasheet download datasheet K7I163682B Datasheet
Additional preview pages of the K7I163682B datasheet.

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Full PDF Text Transcription

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K7I163682B K7I161882B Document Title 512Kx36 & 1Mx18 DDRII CIO b2 SRAM 512Kx36-bit, 1Mx18-bit DDRII CIO b2 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Add the speed bin (-33, -30) 2. Delete the speed bin (-25, -13) 1. Change the Boundary scan exit order. 2. Correct the Overshoot and Undershoot timing diagram. 1. Add the speed bin (-25) 1. Correct the JTAG ID register definition 2. Correct the AC timing parameter (delete the tKHKH Max value) 1. Change the Maximum Clock cycle time. 2. Correct the 165FBGA package ball size. 1. Add the power up/down sequencing comment. 2. Update the DC current parameter (Icc and Isb). 3. Change the Max. speed bin from -33 to -30. 1. Change the ISB1. Speed Bin -30 -25 -20 -16 1.0 2.0 1. Final spec release 1. Delete the x8 Org. 2.
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