Datasheet Details
| Part number | K7P323666M |
|---|---|
| Manufacturer | Samsung Semiconductor |
| File Size | 477.32 KB |
| Description | 1Mx36 & 2Mx18 SRAM |
| Datasheet |
 K7P323666M Datasheet
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General Description
Pin Name K, K SAn DQn SW SWa SWb SWc SWd ZZ VDD VDDQ Pin Description Differential Clocks Synchronous Address Input Bi-directional Data Bus Synchronous Global Write Enable Synchronous Byte a Write Enable Synchronous Byte b Write Enable Synchronous Byte c Write Enable Synchronous Byte d Write Enable A
Key Features
- 1Mx36 or 2Mx18 Organizations.
- 2.5V Core/1.5V Output Power Supply (1.9V max VDDQ).
- HSTL Input and Output Levels.
- Differential, HSTL Clock Inputs K, K.
- Synchronous Read and Write Operation.
- Registered Input and Registered Output.
- Internal Pipeline Latches to Support Late Write.
- Byte Write Capability(four byte write selects, one for each 9bits).
- Synchronous or Asynchronous Output Enable.
- Power Down Mode.