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K7Q161862B

Manufacturer: Samsung Semiconductor

K7Q161862B datasheet by Samsung Semiconductor.

K7Q161862B datasheet preview

K7Q161862B Datasheet Details

Part number K7Q161862B
Datasheet K7Q161862B_Samsungsemiconductor.pdf
File Size 362.69 KB
Manufacturer Samsung Semiconductor
Description (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q161862B page 2 K7Q161862B page 3

K7Q161862B Overview

Final spec release Draft Date Jan. 18, 2004 Remark Advance Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD.

K7Q161862B Key Features

  • 1.8V/2.5V +0.1V/-0.1V Power Supply
  • Separate independent read and write data ports with concurrent read and write operation
  • HSTL I/O
  • Full data coherency, providing most current data
  • Synchronous pipeline read with self timed early write
  • Registered address, control and data input/output
  • DDR(Double Data Rate) Interface on read and write ports
  • Fixed 2-bit burst for both read and write operation
  • Clock-stop supports to reduce current
  • Two input clocks(K and K) for accurate DDR timing at clock rising edges only
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Part Number Description
K7Q161864B (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
K7Q161852A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q161854A (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
K7Q161882A (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM
K7Q163652A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163654A (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM
K7Q163662B (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q163664B (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
K7Q163682A (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM

K7Q161862B Distributor

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