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K7Q161854A - (K7Q161854A / K7Q163654A) 1Mx18-bit QDR SRAM

General Description

W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Read Control BW0(7B),BW1(7A),BW2(5A),BW3(5B) : from Read Control Pin to Byte Wrtie Control 2) Page 7 STATE DIAGRAM from LEAD NOP to READ NOP 1.

Key Features

  • 2) Page 3,4 PIN NAME VDDQ 3) Page 10,.

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Part Number Description Manufacturer

Other Datasheets by Samsung Semiconductor

Part Number Description
K7Q161852A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q161862B (K7Q161862B / K7Q163662B) 512Kx36 & 1Mx18 QDRTM b2 SRAM
K7Q161864B (K7Q161864B / K7Q163664B) 512Kx36 & 1Mx18 QDR TM b4 SRAM
K7Q161882A (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM
K7Q163652A (K7Q161852A / K7Q163652A) 512Kx36 & 1Mx18 QDRTM b2 SRAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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www.DataSheet4U.com K7Q163654A K7Q161854A Document Title 512Kx36-bit, 1Mx18-bit QDRTM SRAM 512Kx36 & 1Mx18 QDRTM b4 SRAM Revision History Rev. No. 0.0 0.1 History 1. Initial document. 1. Amendment 1) Page 3,4 PIN NAME DESCRIPTION W (4A) : from Read Control Pin to Write Control R (8A) : from Write Control Pin to Read Control BW0(7B),BW1(7A),BW2(5A),BW3(5B) : from Read Control Pin to Byte Wrtie Control 2) Page 7 STATE DIAGRAM from LEAD NOP to READ NOP 1. Amendment 1) Page 8 WRITE TRUTH TABLE(x36) BW2,BW3 values for WRITE ALL BYTEs( K↑ ) and WRITE ALLBYTEs( K↑ ) : from "H" to " L" 2) Page 13 TIMING WAVE FORMS Note 2 supplement 1. 1.8V I/O supply voltage addition 1) Page 2 FEATURES 2) Page 3,4 PIN NAME VDDQ 3) Page 10, OPERATING CONTITIONS 4) Page 11 AC TEST CONTITIONS 2.