Datasheet Details
| Part number | K7Q161882A |
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| Manufacturer | Samsung Semiconductor |
| File Size | 383.92 KB |
| Description | (K7Q161882A / K7Q161882A) 512Kx36 & 1Mx18 QDR b2 SRAM |
| Datasheet |
 K7Q161882A Datasheet
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General Description
Input Clock Input Clocks for Output data Address Inputs Data Inputs 1 NOTE
Data Outputs Write Control Read Control Byte Write Control Input Reference Voltage Output Driver Impedance Control Input Power Supply ( 1.8 V ) Output Power Supply (1.5V or 1.8V) Ground JTAG Test Mode Select JTAG Test Data I
Key Features
- 1.8V+0.1V/-0.1V Power Supply.
- I/O Supply Voltage 1.5V+0.1V/-0.1V for 1.5V I/O, 1.8V+0.1V/-0.1V for 1.8V I/O.
- Separate independent read and write data ports with concurrent read and write operation.
- HSTL I/O.
- Full data coherency, providing most current data.
- Synchronous pipeline read with self timed early write.
- Registered address, control and data input/output.
- DDR(Double Data Rate) Interface on read and write ports.