KM48S8030D - 64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL

Product Overview

Samsung semiconductor

Datasheet Details

Part number	KM48S8030D
Manufacturer	Samsung semiconductor
File Size	117.06 KB
Description	64Mbit SDRAM 2M x 8Bit x 4 Banks Synchronous DRAM LVTTL
Datasheet	KM48S8030D Datasheet
Additional preview pages of the KM48S8030D datasheet.

Product details

Description

The KM48S8030D is 67,108,864 bits synchronous high data rate Dynamic RAM organized as 4 x 2,097,152 words by 8 bits, fabricated with SAMSUNG′s high performance CMOS technology.

Features

JEDEC standard 3.3V power supply LVTTL compatible with multiplexed address Four banks operation MRS cycle with address key programs -. CAS latency (2 & 3) -. Burst length (1, 2, 4, 8 & Full page) -. Burst type (Sequential & Interleave) All inputs are sampled at the positive going edge of the system clock Burst read single-bit write operation DQM for masking Auto & self refresh 64ms refresh period (4K Cycle) CMOS SDRAM.

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Other Datasheets by Samsung semiconductor

KM48S8030C - 2M x 8Bit x 4 Banks Synchronous DRAM
KM48S16030 - 4M x 8Bit x 4 Banks Synchronous DRAM
KM48S16030A - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48S16030B - 128Mbit SDRAM 4M x 8Bit x 4 Banks Synchronous DRAM LVTTL
KM48C2000B - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode
KM48C2100B - 2M x 8Bit CMOS Dynamic RAM with Fast Page Mode

Published: Sep 29, 2005 |