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KM718V089

Manufacturer: Samsung Semiconductor

KM718V089 datasheet by Samsung Semiconductor.

KM718V089 datasheet preview

KM718V089 Datasheet Details

Part number KM718V089
Datasheet KM718V089_Samsungsemiconductor.pdf
File Size 536.55 KB
Manufacturer Samsung Semiconductor
Description 512Kx36 & 1Mx18 Synchronous SRAM
KM718V089 page 2 KM718V089 page 3

KM718V089 Overview

The KM736V989 and KM718V089 are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 512K(1M) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; Write cycles are internally self-timed and...

KM718V089 Key Features

  • Synchronous Operation
  • 2 Stage Pipelined operation with 4 Burst
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • VDD= 3.3V +0.165V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
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