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KM718V987 - 256Kx36 & 512Kx18 Synchronous SRAM

General Description

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Key Features

  • Synchronous Operation.
  • On-Chip Address Counter.
  • Self-Timed Write Cycle.
  • On-Chip Address and Control Registers.
  • 3.3V+0.165V/-0.165V Power Supply.
  • I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
  • 5V Tolerant Inputs Except I/O Pins.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.
  • Power Down State via ZZ Signal.
  • LBO Pin allows.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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KM736V887 KM718V987 Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change DC Characteristics. ISB value from 60mA to 90mA at -8 ISB value from 50mA to 80mA at -9 ISB value from 40mA to 70mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13.0ns to 12.0ns at -10 3. Changed DC condition at Icc and parameters ICC ; from 300mA to 350mA at -8, from 260mA to 300mA at -9, from 220mA to 260mA at -10, ISB ; from 90mA to 130mA at -8, from 80mA to 120mA at -9, from 70mA to 110mA at -10, 1. ADD 119BGA(7x17 Ball Grid Array Package) . 2. ADD x32 organization. Add VDDQ Supply voltage( 2.5V ) Changed VOL Max value from 0.