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KM718V887 Datasheet 256kx18 Synchronous Sram

Manufacturer: Samsung Semiconductor

Overview: KM718V887 Document Title 256Kx18-Bit Synchronous Burst SRAM 256Kx18 Synchronous SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Modify power down cycle timing & Interleaved read timing, Insert Note 4 at AC timing characteristics. Change ISB1 value from 10mA to 30mA. Change ISB2 value from 10mA to 20mA. Change Undershoot spec from -3.0V(pulse width≤20ns) to -2.0V(pulse width≤tCYC/2) Add Overshoot spec 4.6V((pulse width≤tCYC/2) Change VIH max from 5.5V to VDD+0.5V Draft Date May. 15. 1997 February. 11. 1998 Remark Preliminary Preliminary 0.2 April. 14. 1998 Preliminary 0.3 May 13. 1998 Change ISB2 value from 20mA to 30mA. Change VDD condition from VDD=3.3V+10%/-5% to VDD=3.3V+0.3V/-0.165V. Final spec Release Add VDDQ Supply voltage( 2.5V ) May 15. 1998 Dec. 02. 1998 Preliminary 1.0 2.0 Final Final The attached data sheets are prepared and approved by SAMSUNG Electronics. SAMSUNG Electronics CO., LTD. reserve the right to change the specifications. SAMSUNG Electronics will evaluate and reply to your requests and questions on the parameters of this device. If you have any questions, please contact the SAMSUNG branch office near your office, call or contact Headquarters. -1- December 1998 Rev. 2.

Key Features

  • Synchronous Operation.
  • On-Chip Address Counter.
  • Write Self-Timed Cycle.
  • On-Chip Address and Control Registers.
  • VDD= 3.3V+0.3V/-0.165V Power Supply.
  • VDDQ Supply Voltage 3.3V+0.3V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
  • 5V Tolerant Inputs except I/O Pins.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.
  • Power Down State via ZZ Signal.
  • Asynchronou.

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