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KM718V887

Manufacturer: Samsung Semiconductor

KM718V887 datasheet by Samsung Semiconductor.

KM718V887 datasheet preview

KM718V887 Datasheet Details

Part number KM718V887
Datasheet KM718V887_Samsungsemiconductor.pdf
File Size 470.96 KB
Manufacturer Samsung Semiconductor
Description 256Kx18 Synchronous SRAM
KM718V887 page 2 KM718V887 page 3

KM718V887 Overview

The KM718V887 is a 4,718,592 bit Synchronous Static Random Access Memory designed for support zero wait state performance for advanced Pentium/Power PC address pipelining. And with CS1 high, ADSP is blocked to control signal. It is organized as 256K words of 18 bits and integrates address and control registers, a 2-bit burst address counter and high output drive circuitry onto a single integrated circuit for reduced...

KM718V887 Key Features

  • Synchronous Operation
  • On-Chip Address Counter
  • Write Self-Timed Cycle
  • On-Chip Address and Control Registers
  • VDD= 3.3V+0.3V/-0.165V Power Supply
  • 5V Tolerant Inputs except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
  • Asynchronous Output Enable Control
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