• Part: KM736V887
  • Description: 256Kx36 & 512Kx18 Synchronous SRAM
  • Manufacturer: Samsung Semiconductor
  • Size: 574.50 KB
Download KM736V887 Datasheet PDF
KM736V887 page 2
Page 2
KM736V887 page 3
Page 3

KM736V887 Key Features

  • Synchronous Operation
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • 3.3V+0.165V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
  • LBO Pin allows a choice of either a interleaved burst or a linear burst