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KM736V887 Datasheet

Manufacturer: Samsung Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

KM736V887 datasheet preview

Datasheet Details

Part number KM736V887
Datasheet KM736V887 KM718V987 Datasheet (PDF)
File Size 574.50 KB
Manufacturer Samsung Semiconductor
Description 256Kx36 & 512Kx18 Synchronous SRAM
KM736V887 page 2 KM736V887 page 3

KM736V887 Overview

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System. It is organized as 256K(512K) words of 36(18) bits and integrates address and control registers, a 2-bit burst address counter and added some new functions for high performance cache RAM applications; Write cycles are internally self-tim.

KM736V887 Key Features

  • Synchronous Operation
  • On-Chip Address Counter
  • Self-Timed Write Cycle
  • On-Chip Address and Control Registers
  • 3.3V+0.165V/-0.165V Power Supply
  • 5V Tolerant Inputs Except I/O Pins
  • Byte Writable Function
  • Global Write Enable Controls a full bus-width write
  • Power Down State via ZZ Signal
  • LBO Pin allows a choice of either a interleaved burst or a linear burst
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KM736V687 64Kx36-Bit Synchronous Burst SRAM
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KM736V689 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V689A 64Kx36-Bit Synchronous Pipelined Burst SRAM
KM736V747 128Kx36 & 256Kx18 Flow-Through NtRAM
KM736V749 128Kx36 & 256Kx18 Pipelined NtRAM
KM736V787 128Kx36 Synchronous SRAM
KM736V789 128Kx36 Synchronous SRAM
KM736V790 128Kx36 Synchronous SRAM
KM736V795 128Kx36 Synchronous SRAM

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