KM736V887 - (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM

This page provides the datasheet information for the KM736V887, a member of the KM718V987 (KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM family.

Datasheet Summary

Description

The KM736V887 and KM718V987 are 9,437,184-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

Synchronous Operation.
On-Chip Address Counter.
Self-Timed Write Cycle.
On-Chip Address and Control Registers.
3.3V+0.165V/-0.165V Power Supply.
I/O Supply Voltage 3.3V+0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
5V Tolerant Inputs Except I/O Pins.
Byte Writable Function.
Global Write Enable Controls a full bus-width write.
Power Down State via ZZ Signal.
LBO Pin allows.

Samsung semiconductor

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Datasheet Details

Part number	KM736V887
Manufacturer	Samsung semiconductor
File Size	574.50 KB
Description	(KM736V887 / KM718V987) 256Kx36 & 512Kx18 Synchronous SRAM
Datasheet	KM736V887 Datasheet
Additional preview pages of the KM736V887 datasheet.

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Full PDF Text Transcription

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KM736V887 KM718V987 Document Title 256Kx36 & 512Kx18 Synchronous SRAM 256Kx36 & 512Kx18-Bit Synchronous Burst SRAM Revision History Rev. No. 0.0 0.1 History Initial draft Change DC Characteristics. ISB value from 60mA to 90mA at -8 ISB value from 50mA to 80mA at -9 ISB value from 40mA to 70mA at -10 ISB1 value from 10mA to 30mA ISB2 value from 10mA to 30mA 1. Changed tCD from 8.0ns to 8.5ns at -8 2. Changed tCYC from 13.0ns to 12.0ns at -10 3. Changed DC condition at Icc and parameters ICC ; from 300mA to 350mA at -8, from 260mA to 300mA at -9, from 220mA to 260mA at -10, ISB ; from 90mA to 130mA at -8, from 80mA to 120mA at -9, from 70mA to 110mA at -10, 1. ADD 119BGA(7x17 Ball Grid Array Package) . 2. ADD x32 organization. Add VDDQ Supply voltage( 2.5V ) Changed VOL Max value from 0.

Published: Dec 13, 2005 |