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KM736V989 - 512Kx36 & 1Mx18 Synchronous SRAM

Datasheet Summary

Description

The KM736V989 and KM718V089 are 18,874,368-bit Synchronous Static Random Access Memory designed for high performance second level cache of Pentium and Power PC based System.

Features

  • Synchronous Operation.
  • 2 Stage Pipelined operation with 4 Burst.
  • On-Chip Address Counter.
  • Self-Timed Write Cycle.
  • On-Chip Address and Control Registers.
  • VDD= 3.3V +0.165V/-0.165V Power Supply.
  • I/O Supply Voltage 3.3V +0.165V/-0.165V for 3.3V I/O or 2.5V+0.4V/-0.125V for 2.5V I/O.
  • 5V Tolerant Inputs Except I/O Pins.
  • Byte Writable Function.
  • Global Write Enable Controls a full bus-width write.

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Datasheet Details

Part number KM736V989
Manufacturer Samsung semiconductor
File Size 536.55 KB
Description 512Kx36 & 1Mx18 Synchronous SRAM
Datasheet download datasheet KM736V989 Datasheet
Additional preview pages of the KM736V989 datasheet.

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Full PDF Text Transcription

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KM736V989 KM718V089 Document Title 512Kx36 & 1Mx18 Synchronous SRAM 512Kx36 & 1Mx18-Bit Synchronous Pipelined Burst SRAM Revision History Rev. No. 0.0 0.1 0.2 History Initial draft 1. Update ICC & ISB values. 1. Change ISB value from 150mA to 110mA at -67. 2. Change ISB value from 130mA to 90mA at -72 . 3. Change ISB value from 120mA to 80mA at -10 . 1. Add tCYC 167MHz and 183MHz. 2. Changed DC condition at Icc and parameters Icc ; from 420mA to 400mA at -67, from 400mA to 380mA at -72, from 350mA to 320mA at -10, 1. Final Spec Release. Draft Date Dec. 29. 1998 May. 27. 1999 Sep. 04. 1999 Remark Preliminary Preliminary Preliminary 0.3 Nov. 19. 1999 Preliminary 1.0 Dec. 08. 1999 Final The attached data sheets are prepared and approved by SAMSUNG Electronics.
Published: |