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M470L1624FT0 - DDR SDRAM SODIMM

General Description

Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 DQS0 ~ DQS8 CK0,CK0 ~ CK2, CK2 CKE0~CKE1 CS0~CS1 RAS CAS WE CB0 ~ CB7 Function Address input (Multiplexed) Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip select input Row address strobe Column address strobe W

Key Features

  • DQS resistors: 22 Ohms. Rev. 1.2 March 2004 128MB, 256MB SODIMM Absolute Maximum Ratings.

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Other Datasheets by Samsung Semiconductor

Part Number Description
M470L3223DT0 256MB DDR SDRAM MODULE
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M470L3224FT0 DDR SDRAM SODIMM
M470L3224FU0 DDR SDRAM SODIMM
M470L6423EN 512MB Unbuffered SODIMM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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128MB, 256MB SODIMM DDR SDRAM DDR SDRAM SODIMM 200pin Unbuffered SODIMM based on 256Mb F-die 64 / 72-bit (Non ECC / ECC) Revision 1.2 March, 2004 Rev. 1.2 March 2004 128MB, 256MB SODIMM Revision History Revision 1.0 (June, 2003) - First release Revision 1.1 (August, 2003) - Corrected typo. Revision 1.2 (March, 2004) - Corrected package dimension. DDR SDRAM Rev. 1.