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M470L6423EN - 512MB Unbuffered SODIMM

General Description

Pin Name A0 ~ A12 BA0 ~ BA1 DQ0 ~ DQ63 DQS0 ~ DQS7 CK0,CK0 ~ CK1, CK1 CKE0 ~ CKE1 CS0 ~ CS1 RAS CAS WE Function Address input (Multiplexed) Bank Select Address Data input/output Data Strobe input/output Clock input Clock enable input Chip select input Row address strobe Column address strobe Write e

Key Features

  • itions Parameter/Condition Input High (Logic 1) Voltage, DQ, DQS and DM signals Input Low (Logic 0) Voltage, DQ, DQS and DM signals. Input Differential Voltage, CK and CK input.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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512MB Unbuffered SODIMM(based on sTSOP) DDR SDRAM DDR SDRAM Unbuffered SODIMM 200pin Unbuffered SODIMM based on 256Mb E-die (x8) with 64-bit Non ECC Revision 1.3 March. 2004 Rev. 1.3 March. 2004 512MB Unbuffered SODIMM(based on sTSOP) Revision History Revision 1.0 (May, 2003) - First release Revision 1.1 (August, 2003) - Corrected typo. Revision 1.2 (December, 2003) - Corrected typo. Revision 1.3 (March, 2004) - Corrected package dimension. DDR SDRAM Rev. 1.3 March. 2004 512MB Unbuffered SODIMM(based on sTSOP) 200Pin Unbuffered SODIMM based on 256Mb E-die (x8) Ordering Information Part Number M470L6423EN0-C(L)B3/A2/B0 Density 512MB Organization 64M x 64 DDR SDRAM Component Composition 32Mx8 (K4H560838E) * 16EA Height 1,250mil Operating Frequencies B3(DDR333@CL=2.