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M470L3223DT0 - 256MB DDR SDRAM MODULE

General Description

The Samsung M470L3223DT0 is 32M bit x 64 Double Data Rate SDRAM high density memory modules based on third gen of 256Mb DDR SDRAM respectively.

Key Features

  • (max); Vin = Vref for DQ,DQS and DM Active standby current; CS# >= VIH(min);.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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M470L3223DT0 256MB DDR SDRAM MODULE (32Mx64 based on 32Mx 8 DDR SDRAM) 200pin SODIMM 64bit Non-ECC/Parity Revision 0.0 Dec. 2001 Rev. 0.0 Dec. 2001 M470L3223DT0 Revision History Revision 0.0 (Dec. 2001) 1. First release. Rev. 0.0 Dec. 2001 M470L3223DT0 M470L3223DT0 200pin DDR SDRAM SODIMM 32Mx64 200pin DDR SDRAM SODIMM based on 32Mx8 GENERAL DESCRIPTION The Samsung M470L3223DT0 is 32M bit x 64 Double Data Rate SDRAM high density memory modules based on third gen of 256Mb DDR SDRAM respectively. The Samsung M470L3223DT0 consists of eight CMOS 32M x 8 bit with 4banks Double Data Rate SDRAMs in 66pin TSOPII(400mil) packages mounted on a 200pin glass-epoxy substrate. Four 0.1uF decoupling capacitors are mounted on the printed circuit board in parallel for each DDR SDRAM.