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K4E661612B - 4M x 16bit CMOS Dynamic RAM

General Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs.

Extended Data Out Mode offers high speed random access of memory cells within the same row.

Refresh cycle(4K Ref.

Key Features

  • of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability.

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Other Datasheets by Samsung Semiconductor

Part Number Description
K4E661612C 4M x 16bit CMOS Dynamic RAM
K4E661612D CMOS DRAM
K4E660412D 16M x 4bit CMOS Dynamic RAM
K4E660812B 8M x 8bit CMOS Dynamic RAM
K4E660812C 8M x 8bit CMOS Dynamic RAM
K4E640412D 16M x 4bit CMOS Dynamic RAM
K4E640812B 8M x 8bit CMOS Dynamic RAM
K4E640812C 8M x 8bit CMOS Dynamic RAM
K4E641612B 4M x 16bit CMOS Dynamic RAM
K4E641612C 4M x 16bit CMOS Dynamic RAM

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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K4E661612B, K4E641612B CMOS DRAM 4M x 16bit CMOS Dynamic RAM with Extended Data Out DESCRIPTION This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. Refresh cycle(4K Ref. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional features of this family. All of this family have CAS-before-RAS refresh, RAS-only refresh and Hidden refresh capabilities. Furthermore, Self-refresh operation is available in L-version. This 4Mx16 EDO Mode DRAM family is fabricated using Samsung′s advanced CMOS process to realize high band-width, low power consumption and high reliability. FEATURES • Part Identification - K4E661612B-TC/L(3.3V, 8K Ref.