K4E661612B Overview
This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional.
K4E661612B Key Features
- Part Identification
- K4E661612B-TC/L(3.3V, 8K Ref., TSOP)
- K4E641612B-TC/L(3.3V, 4K Ref., TSOP)
- Extended Data Out Mode operation
- 2 CAS Byte/Word Read/Write operation
- CAS-before-RAS refresh capability
- RAS-only and Hidden refresh capability
- Fast parallel test mode capability
- Self-refresh capability (L-ver only)
- LVTTL(3.3V) patible inputs and outputs Unit : mW