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K4E661612B Key Features

  • Part Identification
  • K4E661612B-TC/L(3.3V, 8K Ref., TSOP)
  • K4E641612B-TC/L(3.3V, 4K Ref., TSOP)
  • Extended Data Out Mode operation
  • 2 CAS Byte/Word Read/Write operation
  • CAS-before-RAS refresh capability
  • RAS-only and Hidden refresh capability
  • Fast parallel test mode capability
  • Self-refresh capability (L-ver only)
  • LVTTL(3.3V) patible inputs and outputs Unit : mW

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K4E661612B Description

This is a family of 4,194,304 x 16 bit Extended Data Out Mode CMOS DRAMs. Extended Data Out Mode offers high speed random access of memory cells within the same row. or 8K Ref.), access time (-45, -50 or -60), power consumption(Normal or Low power) are optional.